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IXTP1R6N50P
Power MOSFET, N Channel, 500 V, 1 A, 6.5 ohm, TO-220, Through Hole
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No Longer Manufactured
Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXTP1R6N50P
Order Code1427367
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id1A
Drain Source On State Resistance6.5ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5.5V
Power Dissipation43W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
1A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
43W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
500V
Drain Source On State Resistance
6.5ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5.5V
No. of Pins
3Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.004