Print Page
IXTN210P10T
MOSFET Transistor, P Channel, 210 A, 100 V, 0.0075 ohm, 10 V, 4.5 V, SOT-227B
Image is for illustrative purposes only. Please refer to product description.
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXTN210P10T
Order Code3438414
Product RangeTrenchP
Technical Datasheet
78 In Stock
460 more incoming. You can reserve stock now
Next Day Delivery
Order before 6pm standard shipping
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | £37.980 |
| 5+ | £34.960 |
| 10+ | £31.940 |
| 50+ | £28.920 |
Price for:Each
Minimum: 1
Multiple: 1
£37.98 (ex VAT)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXTN210P10T
Order Code3438414
Product RangeTrenchP
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Continuous Drain Current Id210A
Drain Source Voltage Vds100V
Drain Source On State Resistance0.0075ohm
On Resistance Rds(on)0.0075ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4.5V
Power Dissipation Pd830W
Power Dissipation830W
Operating Temperature Max150°C
Product RangeTrenchP
SVHCNo SVHC (12-Jan-2017)
Product Overview
IXTN210P10T is a TrenchP™ power MOSFET. Suitable for high-side switching, push pull amplifiers, DC choppers, automatic test equipment, current regulators and battery charger applications.
- P-channel enhancement mode
- Avalanche rated and fast intrinsic rectifier
- International standard package
- Low intrinsic gate resistance
- miniBLOC with aluminium nitride isolation
- Extended FBSOA and low RDS(ON) and QG
- Easy to mount, space savings and high power density
- 210A continuous drain current Id
- 100V drain source voltage Vds, 10V Rds(on) test voltage, 4.5V max gate source threshold voltage
- 0.0075ohm drain source on state resistance
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
210A
Drain Source On State Resistance
0.0075ohm
Rds(on) Test Voltage
10V
Power Dissipation Pd
830W
Operating Temperature Max
150°C
SVHC
No SVHC (12-Jan-2017)
Transistor Polarity
P Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.0075ohm
Gate Source Threshold Voltage Max
4.5V
Power Dissipation
830W
Product Range
TrenchP
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (12-Jan-2017)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.004
Product traceability