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IXTH12N65X2
Power MOSFET, X2-Class, N Channel, 650 V, 12 A, 0.3 ohm, TO-247, Through Hole
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No Longer Manufactured
Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXTH12N65X2
Order Code2674779
Technical Datasheet
Drain Source Voltage Vds650V
Continuous Drain Current Id12A
Drain Source On State Resistance0.3ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4.5V
Power Dissipation180W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
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Technical Specifications
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.3ohm
Gate Source Threshold Voltage Max
4.5V
No. of Pins
3Pins
Product Range
-
Continuous Drain Current Id
12A
Rds(on) Test Voltage
10V
Power Dissipation
180W
Operating Temperature Max
150°C
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.006