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ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFT18N100Q3
Order Code2674768
Product RangeHiperFET
Technical Datasheet
20 In Stock
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10+ | £8.210 |
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Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFT18N100Q3
Order Code2674768
Product RangeHiperFET
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds1kV
Continuous Drain Current Id18A
Drain Source On State Resistance0.66ohm
Transistor Case StyleTO-268 (D3PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max6.5V
Power Dissipation830W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeHiperFET
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (17-Jan-2023)
Product Overview
Notes
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
18A
Transistor Case Style
TO-268 (D3PAK)
Rds(on) Test Voltage
10V
Power Dissipation
830W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (17-Jan-2023)
Drain Source Voltage Vds
1kV
Drain Source On State Resistance
0.66ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
6.5V
No. of Pins
3Pins
Product Range
HiperFET
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.004
Product traceability