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IXFN360N10T
MOSFET Transistor, GigaMOS™, N Channel, 360 A, 100 V, 0.0026 ohm, 100 V, 4.5 V, SOT-227B
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ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN360N10T
Order Code2784061
Product RangeTrench HiperFET
Technical Datasheet
390 In Stock
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | £21.710 |
| 5+ | £18.800 |
| 10+ | £15.880 |
| 50+ | £15.330 |
| 100+ | £14.780 |
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Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN360N10T
Order Code2784061
Product RangeTrench HiperFET
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Continuous Drain Current Id360A
Drain Source Voltage Vds100V
Drain Source On State Resistance0.0026ohm
On Resistance Rds(on)0.0026ohm
Rds(on) Test Voltage100V
Gate Source Threshold Voltage Max4.5V
Power Dissipation Pd830W
Power Dissipation830W
Operating Temperature Max175°C
Product RangeTrench HiperFET
SVHCNo SVHC (12-Jan-2017)
Product Overview
Applications
Medical
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
360A
Drain Source On State Resistance
0.0026ohm
Rds(on) Test Voltage
100V
Power Dissipation Pd
830W
Operating Temperature Max
175°C
SVHC
No SVHC (12-Jan-2017)
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.0026ohm
Gate Source Threshold Voltage Max
4.5V
Power Dissipation
830W
Product Range
Trench HiperFET
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (12-Jan-2017)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.03