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IXFN180N25T
MOSFET Transistor, N Channel, 168 A, 250 V, 0.0129 ohm, 10 V, 5 V, SOT-227B
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ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN180N25T
Order Code3438386
Product RangeGigaMOS
Technical Datasheet
No Longer Stocked
Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN180N25T
Order Code3438386
Product RangeGigaMOS
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Continuous Drain Current Id168A
Drain Source Voltage Vds250V
Drain Source On State Resistance0.0129ohm
On Resistance Rds(on)0.0129ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation900W
Power Dissipation Pd900W
Operating Temperature Max150°C
Product RangeGigaMOS
SVHCNo SVHC (12-Jan-2017)
Technical Specifications
Transistor Polarity
N Channel
Continuous Drain Current Id
168A
Drain Source On State Resistance
0.0129ohm
Rds(on) Test Voltage
10V
Power Dissipation
900W
Operating Temperature Max
150°C
SVHC
No SVHC (12-Jan-2017)
Channel Type
N Channel
Drain Source Voltage Vds
250V
On Resistance Rds(on)
0.0129ohm
Gate Source Threshold Voltage Max
5V
Power Dissipation Pd
900W
Product Range
GigaMOS
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (12-Jan-2017)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.004