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IXFN132N50P3
MOSFET Transistor, N Channel, 112 A, 500 V, 0.039 ohm, 10 V, 5 V, SOT-227B
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ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN132N50P3
Order Code2674760
Product RangePolar3 HiPerFET
Technical Datasheet
No Longer Stocked
Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN132N50P3
Order Code2674760
Product RangePolar3 HiPerFET
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Continuous Drain Current Id112A
Drain Source Voltage Vds500V
On Resistance Rds(on)0.039ohm
Drain Source On State Resistance0.039ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation Pd1.5kW
Power Dissipation1.5kW
Operating Temperature Max150°C
Product RangePolar3 HiPerFET
SVHCLead (17-Jan-2023)
Product Overview
Applications
Medical
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
N Channel
Continuous Drain Current Id
112A
On Resistance Rds(on)
0.039ohm
Rds(on) Test Voltage
10V
Power Dissipation Pd
1.5kW
Operating Temperature Max
150°C
SVHC
Lead (17-Jan-2023)
Channel Type
N Channel
Drain Source Voltage Vds
500V
Drain Source On State Resistance
0.039ohm
Gate Source Threshold Voltage Max
5V
Power Dissipation
1.5kW
Product Range
Polar3 HiPerFET
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.03