Print Page
IXFN130N30
MOSFET Transistor, N Channel, 130 A, 300 V, 0.022 ohm, 10 V, 4 V
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN130N30
Order Code7347995
Technical Datasheet
Channel TypeN Channel
Continuous Drain Current Id130A
Drain Source Voltage Vds300V
Drain Source On State Resistance0.022ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation700W
Operating Temperature Max150°C
Product Range-
Product Overview
The IXFN130N30 is a single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features low static drain-to-source ON-resistance HDMOS™ process and high power density. It is suitable for DC-to-DC converters, battery chargers, DC choppers, switch-mode and resonant-mode power supplies.
- International standard packages
- MiniBLOC with aluminium nitride isolation
- Rugged polysilicon gate cell structure
- Unclamped inductive switching (UIS) rating
- Low package inductance
- Easy to mount
- Space saving
Applications
Power Management, Lighting
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
300V
Rds(on) Test Voltage
10V
Power Dissipation
700W
Product Range
-
Continuous Drain Current Id
130A
Drain Source On State Resistance
0.022ohm
Gate Source Threshold Voltage Max
4V
Operating Temperature Max
150°C
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.045359