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No Longer Manufactured
Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN120N20
Order Code9359257
Technical Datasheet
Channel TypeN Channel
Continuous Drain Current Id120A
Drain Source Voltage Vds200V
Drain Source On State Resistance0.017ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation600W
Operating Temperature Max150°C
Product Range-
SVHCNo SVHC (17-Jan-2023)
Product Overview
The IXFN120N20 is a 200V N-channel Enhancement Mode Power MOSFET with fast intrinsic diode (HiPerFET™) and low RDS (on). The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.
- Encapsulating epoxy meets UL94V-0 flammability
- miniBLOC with aluminium nitride isolation
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS) rated
- Low inductance
- High power density
- Easy to mount
- Space-saving s
Applications
Power Management, Motor Drive & Control, Lighting
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
200V
Rds(on) Test Voltage
10V
Power Dissipation
600W
Product Range
-
Continuous Drain Current Id
120A
Drain Source On State Resistance
0.017ohm
Gate Source Threshold Voltage Max
4V
Operating Temperature Max
150°C
SVHC
No SVHC (17-Jan-2023)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.043545