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IXFN102N30P
MOSFET Transistor, N Channel, 86 A, 300 V, 0.033 ohm, 10 V, 5 V, SOT-227B
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ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN102N30P
Order Code2674759
Product RangePolarHV HiPerFET
Technical Datasheet
No Longer Stocked
Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN102N30P
Order Code2674759
Product RangePolarHV HiPerFET
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Continuous Drain Current Id86A
Drain Source Voltage Vds300V
Drain Source On State Resistance0.033ohm
On Resistance Rds(on)0.033ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation570W
Power Dissipation Pd570W
Operating Temperature Max150°C
Product RangePolarHV HiPerFET
Product Overview
Applications
Medical
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
86A
Drain Source On State Resistance
0.033ohm
Rds(on) Test Voltage
10V
Power Dissipation
570W
Operating Temperature Max
150°C
SVHC
No SVHC (12-Jan-2017)
Transistor Polarity
N Channel
Drain Source Voltage Vds
300V
On Resistance Rds(on)
0.033ohm
Gate Source Threshold Voltage Max
5V
Power Dissipation Pd
570W
Product Range
PolarHV HiPerFET
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (12-Jan-2017)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.03
Product traceability