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IXFH20N80Q
Power MOSFET, N Channel, 800 V, 20 A, 0.42 ohm, TO-247, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFH20N80Q
Order Code7347871
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id20A
Drain Source On State Resistance0.42ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4.5V
Power Dissipation360W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The IXFH20N80Q is a Q-class HiPerFET™ N-channel enhancement-mode Power MOSFET features avalanche rated and fast intrinsic rectifier.
- Low RDS (ON) and QG
- Avalanche energy and current rated
- UL94V-0 Flammability rating
- High dV/dt and low Qg
- Easy to mount
- Space savings
- High power density
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
20A
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Power Dissipation
360W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
800V
Drain Source On State Resistance
0.42ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4.5V
No. of Pins
3Pins
Product Range
-
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.006