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IXFC110N10P
Power MOSFET, N Channel, 100 V, 60 A, 0.017 ohm, ISOPLUS-220, Through Hole
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No Longer Manufactured
Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFC110N10P
Order Code1300080
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id60A
Drain Source On State Resistance0.017ohm
Transistor Case StyleISOPLUS-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation120W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
60A
Transistor Case Style
ISOPLUS-220
Rds(on) Test Voltage
10V
Power Dissipation
120W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.017ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002