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IXFN24N100F
MOSFET Transistor, N Channel, 24 A, 1 kV, 0.39 ohm, 10 V, 5.5 V
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerIXYS RF
Manufacturer Part NoIXFN24N100F
Order Code1347749
Technical Datasheet
Drain Source Voltage Vds1kV
Continuous Drain Current Id24A
Power Dissipation600W
Power Dissipation Pd600W
Drain Source On State Resistance0.39ohm
Operating Frequency Min-
Rds(on) Test Voltage10V
Operating Frequency Max500kHz
Gate Source Threshold Voltage Max5.5V
RF Transistor CaseSOT-227B
Operating Temperature Max150°C
No. of Pins4Pins
Channel TypeN Channel
Product Range-
SVHCNo SVHC (12-Jan-2017)
Technical Specifications
Drain Source Voltage Vds
1kV
Power Dissipation
600W
Drain Source On State Resistance
0.39ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
5.5V
Operating Temperature Max
150°C
Channel Type
N Channel
SVHC
No SVHC (12-Jan-2017)
Continuous Drain Current Id
24A
Power Dissipation Pd
600W
Operating Frequency Min
-
Operating Frequency Max
500kHz
RF Transistor Case
SOT-227B
No. of Pins
4Pins
Product Range
-
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (12-Jan-2017)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.03