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IRF1324S-7PPBF
Power MOSFET, N Channel, 24 V, 429 A, 800 µohm, TO-263 (D2PAK), Surface Mount
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No Longer Stocked
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF1324S-7PPBF
Order Code1551910
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds24V
Continuous Drain Current Id429A
Drain Source On State Resistance800µohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation300W
No. of Pins7Pins
Operating Temperature Max175°C
Product Range-
Qualification-
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Product Overview
The IRF1324S-7PPBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and di/dt capability
Applications
Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
429A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
300W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
24V
Drain Source On State Resistance
800µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
7Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00143