Print Page
SPI11N60CFD
Power MOSFET, N Channel, 650 V, 11 A, 0.44 ohm, TO-220, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Stocked
Product Information
ManufacturerINFINEON
Manufacturer Part NoSPI11N60CFD
Order Code1664113
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id11A
Drain Source On State Resistance0.44ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation125W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for SPI11N60CFD
8 Products Found
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
11A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
125W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.44ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002