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No Longer Manufactured
Product Information
ManufacturerINFINEON
Manufacturer Part NoSPD02N60S5
Order Code1471786
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id1.8A
Drain Source On State Resistance3ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4.5V
Power Dissipation25W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The SPD02N60S5 is a 600V CoolMOS™ N-channel Power MOSFET features ultra-low gate current. It is suitable for general purpose applications.
- New revolutionary high voltage technology
- Extreme dV/dt rated
- Ultra low effective capacitance
- Qualified according to JEDEC for target applications
- Improved transconductance
- Innovative high voltage technology
- Worldwide best RDS (ON)
- Periodic avalanche rated
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
1.8A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
25W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
600V
Drain Source On State Resistance
3ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4.5V
No. of Pins
3Pins
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00036