Print Page
SPB12N50C3ATMA1
Power MOSFET, N Channel, 560 V, 11.6 A, 0.34 ohm, TO-263 (D2PAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoSPB12N50C3ATMA1
Order Code2480729
Also Known AsSPB12N50C3, SP000014894
Technical Datasheet
Product Information
ManufacturerINFINEON
Manufacturer Part NoSPB12N50C3ATMA1
Order Code2480729
Also Known AsSPB12N50C3, SP000014894
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds560V
Continuous Drain Current Id11.6A
Drain Source On State Resistance0.34ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation125W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for SPB12N50C3ATMA1
2 Products Found
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
11.6A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
125W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
560V
Drain Source On State Resistance
0.34ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00143
Product traceability