Product Information
Product Overview
The IRS21814SPBF is a high voltage high speed power MOSFET and IGBT high and low Side Driver with independent high-side and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
- Floating channel designed for bootstrap operation
- Tolerant to negative transient voltage (dV/dt immune)
- Under-voltage lockout for both channels
- 3.3 and 5V Input logic compatible
- Matched propagation delay for both channels
- Logic and power ground ±5V offset
- Lower di/dt gate driver for better noise immunity
Applications
Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
2Channels
High Side and Low Side
14Pins
Surface Mount
1.9A
10V
-40°C
180ns
-
-
Non-Isolated
MOSFET
SOIC
Non-Inverting
2.3A
20V
125°C
220ns
-
No SVHC (23-Jan-2024)
Technical Docs (2)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate