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IRLSL3036PBF
Power MOSFET, N Channel, 60 V, 195 A, 0.0024 ohm, TO-262, Through Hole
No Longer Manufactured
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRLSL3036PBF
Order Code2839500
Product RangeHEXFET
Also Known AsIRLSL3036PBF, SP001559028
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id195A
Drain Source On State Resistance0.0024ohm
Transistor Case StyleTO-262
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation380W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeHEXFET
Qualification-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
195A
Transistor Case Style
TO-262
Rds(on) Test Voltage
10V
Power Dissipation
380W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.0024ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
HEXFET
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001
Product traceability