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No Longer Manufactured
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRLR8256PBF
Order Code1698303
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds25V
Continuous Drain Current Id25A
Drain Source On State Resistance0.0057ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.8V
Power Dissipation63W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
Product Overview
The IRLR8256PBF is a HEXFET® single N-channel Power MOSFET offers fully characterized avalanche voltage and current. It is suitable for high frequency synchronous buck converters and high frequency isolated DC-to-DC converters with synchronous rectification for telecom use.
- Ultra-low gate impedance
- Very low RDS (ON) at 4.5V VGS
- Logic level
Applications
Power Management, Computers & Computer Peripherals, Communications & Networking, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
25A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
63W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
25V
Drain Source On State Resistance
0.0057ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.8V
No. of Pins
3Pins
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001058
Product traceability