Print Page
IRLR024NTRPBF
Power MOSFET, N Channel, 55 V, 17 A, 0.065 ohm, TO-252AA, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRLR024NTRPBF
Order Code2468052RL
Also Known AsSP001578872
Technical Datasheet
235 In Stock
4,000 more incoming. You can reserve stock now
EXPRESS Delivery Next Business Day - arrives by 1PM*
Order before 6pm
FREE Standard Delivery
on orders £0.00 and over
Accurate delivery times will be calculated in Checkout
| Quantity | Price (ex VAT) |
|---|---|
| 100+ | £0.327 |
| 500+ | £0.265 |
| 1000+ | £0.241 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
£36.20 (ex VAT)
A £3.50 re-reeling charge will be added for this product
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRLR024NTRPBF
Order Code2468052RL
Also Known AsSP001578872
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id17A
Drain Source On State Resistance0.065ohm
Transistor Case StyleTO-252AA
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation45W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
Product Overview
The IRLR024NTRPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications.
- Logic level gate drive
- Advanced process technology
- Fully avalanche rating
- Dynamic dV/dt rating
Applications
Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
17A
Transistor Case Style
TO-252AA
Rds(on) Test Voltage
10V
Power Dissipation
45W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
55V
Drain Source On State Resistance
0.065ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (3)
Alternatives for IRLR024NTRPBF
4 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000589
Product traceability