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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRLML6302GTRPBF
Order Code2726011
Product RangeHEXFET
Also Known AsSP001550492
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id780mA
Drain Source On State Resistance0.6ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1.5V
Power Dissipation540mW
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeHEXFET
Qualification-
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Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
780mA
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
540mW
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.6ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.5V
No. of Pins
3Pins
Product Range
HEXFET
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000635