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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRG4PH50KPBF
Order Code2468044
Product RangeIRG4
Technical Datasheet
Continuous Collector Current45A
Collector Emitter Saturation Voltage3.28V
Power Dissipation200W
Collector Emitter Voltage Max1.2kV
Transistor Case StyleTO-247AC
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingThrough Hole
Product RangeIRG4
Alternatives for IRG4PH50KPBF
1 Product Found
Product Overview
The IRG4PH50KPBF is an Insulated Gate Bipolar Transistor combines low conduction losses with high switching speed. It feature latest generation design provides tighter parameter distribution and higher efficiency than previous generations. As a freewheeling diode recommend our HEXFRED™ ultrafast, ultra-soft recovery diodes for minimum EMI/noise and switching losses in the diode and IGBT.
- Latest generation 4 IGBT's offer highest power density motor controls possible
Applications
Motor Drive & Control, Consumer Electronics, Power Management
Technical Specifications
Continuous Collector Current
45A
Power Dissipation
200W
Transistor Case Style
TO-247AC
Operating Temperature Max
150°C
Product Range
IRG4
Collector Emitter Saturation Voltage
3.28V
Collector Emitter Voltage Max
1.2kV
No. of Pins
3Pins
Transistor Mounting
Through Hole
Technical Docs (1)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002041