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IRFU9N20DPBF
Power MOSFET, N Channel, 200 V, 9.4 A, 0.38 ohm, TO-251, Through Hole
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No Longer Stocked
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFU9N20DPBF
Order Code8659214
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id9.4A
Drain Source On State Resistance0.38ohm
Transistor Case StyleTO-251
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5.5V
Power Dissipation86W
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
Qualification-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
9.4A
Transistor Case Style
TO-251
Rds(on) Test Voltage
10V
Power Dissipation
86W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.38ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5.5V
No. of Pins
4Pins
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0004