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IRFS4410ZPBF
Power MOSFET, N Channel, 100 V, 75 A, 9000 µohm, TO-263 (D2PAK), Surface Mount
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No Longer Manufactured
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFS4410ZPBF
Order Code1436981
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id75A
Drain Source On State Resistance9000µohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation230W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
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Product Overview
The IRFS4410ZPBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and di/dt capability
- Halogen-free
Applications
Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
75A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
230W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
100V
Drain Source On State Resistance
9000µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002431