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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFS38N20DTRLP..
Order Code1298484RL
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id44A
Drain Source On State Resistance0.054ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation320W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
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Product Overview
The IRFS38N20DTRLP is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters and plasma display panel.
- Fully characterized capacitance including effective COSS to simplify design
- Fully characterized avalanche voltage and current
Applications
Power Management, Consumer Electronics
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
44A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
320W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.054ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00143