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No Longer Manufactured
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFS3107PBF
Order Code1688586
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds75V
Continuous Drain Current Id230A
Drain Source On State Resistance0.003ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.35V
Power Dissipation370W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
Product Overview
The IRFS3107PBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and di/dt capability
Applications
Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
230A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
370W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
75V
Drain Source On State Resistance
0.003ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.35V
No. of Pins
3Pins
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000907
Product traceability