Product Information
Alternatives for IRFI4212H-117PXKMA1.
3 Products Found
Product Overview
The IRFI4212H-117P is a HEXFET® dual N-channel Power MOSFET designed for class-D audio amplifier applications. It consists of two power MOSFET switches connected in half-bridge configuration. The latest process is used to achieve low ON-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key class-D audio amplifier performance factors such as efficiency, THD and EMI. These combine to make this half-bridge a highly efficient, robust and reliable device. It can delivery up to 150W per channel into 4Ω load in half-bridge configuration amplifier.
- Reduces the part count by half
- Facilitates better PCB layout
- Low RDS (ON) for improved efficiency
- Low Qg and Qsw for better THD and improved efficiency
- Low Qrr for better THD and lower EMI
Applications
Audio, Power Management
Technical Specifications
N Channel
11A
TO-220FP
10V
18W
150°C
-
100V
0.058ohm
Through Hole
5V
5Pins
-
Technical Docs (2)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate