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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFHM8329TRPBF
Order Code2580012RL
Product RangeHEXFET
Also Known AsSP001566808
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id57A
Drain Source On State Resistance4800µohm
Transistor Case StylePQFN
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.7V
Power Dissipation33W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeHEXFET
Qualification-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
57A
Transistor Case Style
PQFN
Rds(on) Test Voltage
10V
Power Dissipation
33W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
4800µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.7V
No. of Pins
8Pins
Product Range
HEXFET
MSL
MSL 1 - Unlimited
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001
Product traceability