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ManufacturerINFINEON
Manufacturer Part NoIRF9952QPBF
Order Code1551939
Product RangeHEXFET Series
Technical Datasheet
No Longer Stocked
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF9952QPBF
Order Code1551939
Product RangeHEXFET Series
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel3.5A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.08ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product RangeHEXFET Series
QualificationAEC-Q101
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
-
Product Range
HEXFET Series
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
3.5A
Drain Source On State Resistance N Channel
0.08ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
AEC-Q101
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005