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IRF9952
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 3.5 A, 3.5 A, 0.1 ohm
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ManufacturerINFINEON
Manufacturer Part NoIRF9952
Order Code934630
Product RangeHEXFET Series
Technical Datasheet
No Longer Stocked
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF9952
Order Code934630
Product RangeHEXFET Series
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel3.5A
Continuous Drain Current Id P Channel3.5A
Drain Source On State Resistance N Channel0.1ohm
Drain Source On State Resistance P Channel0.1ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max-
Product RangeHEXFET Series
Qualification-
Alternatives for IRF9952
1 Product Found
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
3.5A
Drain Source On State Resistance P Channel
0.1ohm
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
HEXFET Series
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
3.5A
Drain Source On State Resistance N Channel
0.1ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2W
Operating Temperature Max
-
Qualification
-
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:No
RoHS Phthalates Compliant:No
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005