Print Page
IRF7907TRPBF
Dual MOSFET, N Channel, 30 V, 30 V, 11 A, 11 A, 0.0098 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRF7907TRPBF
Order Code2725920
Product RangeHEXFET Series
Also Known AsSP001566462
Technical Datasheet
1,764 In Stock
Need more?
Next Day Delivery
Order before 6pm standard shipping
| Quantity | Price (ex VAT) |
|---|---|
| 5+ | £1.090 |
| 50+ | £0.708 |
| 250+ | £0.494 |
| 1000+ | £0.350 |
| 2000+ | £0.324 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
£5.45 (ex VAT)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF7907TRPBF
Order Code2725920
Product RangeHEXFET Series
Also Known AsSP001566462
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel11A
Continuous Drain Current Id P Channel11A
Drain Source On State Resistance N Channel0.0098ohm
Drain Source On State Resistance P Channel0.0098ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product RangeHEXFET Series
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
Dual N-channel HEXFET® power MOSFET for POL converters in notebook computers, servers, graphics cards, game consoles and set-top box.
- Very low RDS(on) at 4.5V VGS
- Low gate charge
- Fully characterized avalanche voltage and current
- Improved body diode reverse recovery
- 100% tested for RG
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
11A
Drain Source On State Resistance P Channel
0.0098ohm
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
HEXFET Series
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
11A
Drain Source On State Resistance N Channel
0.0098ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000074
Product traceability