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IRF7807VTRPBF
Power MOSFET, N Channel, 30 V, 8.3 A, 0.025 ohm, SOIC, Surface Mount
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF7807VTRPBF
Order Code2839485RL
Product RangeHEXFET
Also Known AsIRF7807VTRPBF, SP001566394
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id8.3A
Drain Source On State Resistance0.025ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max3V
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeHEXFET
Qualification-
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Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
8.3A
Transistor Case Style
SOIC
Rds(on) Test Voltage
4.5V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.025ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Product Range
HEXFET
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001
Product traceability