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IRF7555
Dual MOSFET, P Channel, 20 V, 4.3 A
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ManufacturerINFINEON
Manufacturer Part NoIRF7555
Order Code3939121
Product RangeHEXFET Series
Technical Datasheet
No Longer Stocked
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF7555
Order Code3939121
Product RangeHEXFET Series
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds N Channel-
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel-
Continuous Drain Current Id P Channel4.3A
Drain Source On State Resistance N Channel-
Drain Source On State Resistance P Channel0.055ohm
Transistor Case StyleµSOIC
No. of Pins8Pins
Power Dissipation N Channel-
Power Dissipation P Channel1.25W
Operating Temperature Max-
Product RangeHEXFET Series
Qualification-
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
4.3A
Drain Source On State Resistance P Channel
0.055ohm
No. of Pins
8Pins
Power Dissipation P Channel
1.25W
Product Range
HEXFET Series
Drain Source Voltage Vds N Channel
-
Continuous Drain Current Id N Channel
-
Drain Source On State Resistance N Channel
-
Transistor Case Style
µSOIC
Power Dissipation N Channel
-
Operating Temperature Max
-
Qualification
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:No
RoHS Phthalates Compliant:No
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00002