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IRF7450PBF
Power MOSFET, N Channel, 200 V, 2.5 A, 0.17 ohm, SOIC, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF7450PBF
Order Code1013459
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id2.5A
Drain Source On State Resistance0.17ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5.5V
Power Dissipation3W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
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Product Overview
The IRF7450PBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters.
- Fully characterized capacitance including effective COSS to simplify design
- Fully characterized avalanche voltage and current
Applications
Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
2.5A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
3W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.17ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
5.5V
No. of Pins
8Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000167