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IRF6898MTRPBF
Power MOSFET, N Channel, 25 V, 213 A, 1100 µohm, DirectFET MX, Surface Mount
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF6898MTRPBF
Order Code2579992RL
Product RangeHEXFET
Also Known AsSP001524690
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds25V
Continuous Drain Current Id213A
Drain Source On State Resistance1100µohm
Transistor Case StyleDirectFET MX
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.6V
Power Dissipation78W
No. of Pins7Pins
Operating Temperature Max150°C
Product RangeHEXFET
Qualification-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
213A
Transistor Case Style
DirectFET MX
Rds(on) Test Voltage
10V
Power Dissipation
78W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
25V
Drain Source On State Resistance
1100µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.6V
No. of Pins
7Pins
Product Range
HEXFET
MSL
MSL 1 - Unlimited
Technical Docs (3)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001
Product traceability