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IRF6616TR1PBF
Power MOSFET, N Channel, 40 V, 19 A, 5000 µohm, DirectFET MX, Surface Mount
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No Longer Stocked
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF6616TR1PBF
Order Code1436913
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id19A
Drain Source On State Resistance5000µohm
Transistor Case StyleDirectFET MX
Transistor MountingSurface Mount
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max1.8V
Power Dissipation2.8mW
No. of Pins5Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for IRF6616TR1PBF
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Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
19A
Transistor Case Style
DirectFET MX
Rds(on) Test Voltage
20V
Power Dissipation
2.8mW
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
40V
Drain Source On State Resistance
5000µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.8V
No. of Pins
5Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005