Print Page
IRF4104SPBF
Power MOSFET, N Channel, 40 V, 120 A, 0.0055 ohm, TO-263 (D2PAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRF4104SPBF
Order Code1013378
Also Known AsSP001551088
Technical Datasheet
212 In Stock
Need more?
Next Day Delivery
Order before 6pm standard shipping
Available until stock is exhausted
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | £0.803 |
| 10+ | £0.774 |
| 100+ | £0.750 |
Price for:Each
Minimum: 1
Multiple: 1
£0.80 (ex VAT)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF4104SPBF
Order Code1013378
Also Known AsSP001551088
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id120A
Drain Source On State Resistance0.0055ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation140W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (17-Jan-2023)
Alternatives for IRF4104SPBF
8 Products Found
Product Overview
The IRF4104SPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
- Advanced process technology
- Repetitive avalanche allowed up to Tjmax
Applications
Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
120A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
140W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (17-Jan-2023)
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.0055ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00144