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IRF3710ZSTRLPBF
Power MOSFET, HEXFET®, N Channel, 100 V, 59 A, 0.014 ohm, TO-263 (D2PAK), Surface Mount
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Available to Order
Manufacturer Standard Lead Time: 14 week(s)
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| Quantity | Price (ex VAT) |
|---|---|
| 800+ | £0.595 |
| 2400+ | £0.593 |
Price for:Each (Supplied on Full Reel)
Minimum: 800
Multiple: 800
£476.00 (ex VAT)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF3710ZSTRLPBF
Order Code4319176
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id59A
Drain Source On State Resistance0.014ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation160W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
59A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
160W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.014ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.004536
Product traceability