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IPP042N03LGXKSA1
Power MOSFET, N Channel, 30 V, 80 A, 0.0042 ohm, TO-220, Through Hole
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ManufacturerINFINEON
Manufacturer Part NoIPP042N03LGXKSA1
Order Code1775621
Also Known AsIPP042N03L G, SP000680792
Technical Datasheet
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| Quantity | Price (ex VAT) |
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| 1+ | £1.260 |
| 10+ | £0.788 |
| 100+ | £0.679 |
| 500+ | £0.510 |
| 1000+ | £0.465 |
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPP042N03LGXKSA1
Order Code1775621
Also Known AsIPP042N03L G, SP000680792
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id80A
Drain Source On State Resistance0.0042ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Power Dissipation79W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
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Product Overview
The IPP042N03L G is an OptiMOS™ N-channel Power MOSFET sets new standards in power density and energy efficiency. It is tailored to the needs of power management by improved EMI behaviour, as well as increased battery life. It is available in half-bridge configuration.
- Increased battery lifetime
- Improved EMI behaviour making external snubber networks obsolete
- Saving space
- Reducing power losses
- Optimized technology for DC-to-DC converters
- Qualified according to JEDEC for target applications
- Logic level
- Excellent gate charge x RDS (ON) product (FOM)
- Very low ON-resistance RDS (ON)
- Avalanche rated
- Halogen-free, Green device
Applications
Power Management, Motor Drive & Control, LED Lighting, Computers & Computer Peripherals, Portable Devices, Consumer Electronics
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
80A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
79W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (23-Jan-2024)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0042ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
-
MSL
-
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002