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IPI086N10N3GXKSA1
Power MOSFET, N Channel, 100 V, 80 A, 0.0074 ohm, TO-262, Through Hole
500 In Stock
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | £1.790 |
| 10+ | £0.877 |
| 100+ | £0.802 |
| 500+ | £0.640 |
| 1000+ | £0.533 |
| 5000+ | £0.511 |
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Multiple: 1
£1.79 (ex VAT)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPI086N10N3GXKSA1
Order Code2781092
Product RangeOptiMOS 3
Also Known AsIPI086N10N3 G, SP000683070
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id80A
Drain Source On State Resistance0.0074ohm
Transistor Case StyleTO-262
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.7V
Power Dissipation125W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeOptiMOS 3
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
80A
Transistor Case Style
TO-262
Rds(on) Test Voltage
10V
Power Dissipation
125W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0074ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2.7V
No. of Pins
3Pins
Product Range
OptiMOS 3
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001
Product traceability