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IPD90R1K2C3BTMA1
Power MOSFET, N Channel, 900 V, 5.1 A, 0.94 ohm, TO-252 (DPAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPD90R1K2C3BTMA1
Order Code2726059RL
Product RangeCoolMOS C3
Also Known AsIPD90R1K2C3, SP000413720
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPD90R1K2C3BTMA1
Order Code2726059RL
Product RangeCoolMOS C3
Also Known AsIPD90R1K2C3, SP000413720
Channel TypeN Channel
Drain Source Voltage Vds900V
Continuous Drain Current Id5.1A
Drain Source On State Resistance0.94ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation83W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeCoolMOS C3
Qualification-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
5.1A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
83W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
900V
Drain Source On State Resistance
0.94ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
CoolMOS C3
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002