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IPD85P04P4L06ATMA1
Power MOSFET, P Channel, 40 V, 85 A, 0.0064 ohm, TO-252 (DPAK), Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoIPD85P04P4L06ATMA1
Order Code4384138
Product RangeOptiMOS P2 Series
Technical Datasheet
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPD85P04P4L06ATMA1
Order Code4384138
Product RangeOptiMOS P2 Series
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id85A
Drain Source On State Resistance0.0064ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.7V
Power Dissipation88W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeOptiMOS P2 Series
QualificationAEC-Q101
SVHCNo SVHC (27-Jun-2018)
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Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
85A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
88W
Operating Temperature Max
175°C
Qualification
AEC-Q101
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.0064ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.7V
No. of Pins
3Pins
Product Range
OptiMOS P2 Series
SVHC
No SVHC (27-Jun-2018)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000402
Product traceability