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IPD60R450E6ATMA1
Power MOSFET, N Channel, 600 V, 9.2 A, 0.41 ohm, TO-252 (DPAK), Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoIPD60R450E6ATMA1
Order Code2480834RL
Also Known AsIPD60R450E6, SP001117720
Technical Datasheet
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPD60R450E6ATMA1
Order Code2480834RL
Also Known AsIPD60R450E6, SP001117720
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id9.2A
Drain Source On State Resistance0.41ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation74W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
9.2A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
74W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.41ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00143
Product traceability