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IPD30N06S215ATMA1
Power MOSFET, N Channel, 55 V, 30 A, 0.0113 ohm, TO-252 (DPAK), Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoIPD30N06S215ATMA1
Order Code2480827
Also Known AsIPD30N06S2-15 , SP000252160
Technical Datasheet
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPD30N06S215ATMA1
Order Code2480827
Also Known AsIPD30N06S2-15 , SP000252160
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id30A
Drain Source On State Resistance0.0113ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation136W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
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Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
30A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
136W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
55V
Drain Source On State Resistance
0.0113ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00143