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ManufacturerINFINEON
Manufacturer Part NoIPB60R165CPATMA1
Order Code1664017RL
Also Known AsIPB60R165CP, SP000096439
Technical Datasheet
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Quantity | Price (ex VAT) |
---|---|
100+ | £1.800 |
500+ | £1.480 |
1000+ | £1.440 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
£183.50 (ex VAT)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPB60R165CPATMA1
Order Code1664017RL
Also Known AsIPB60R165CP, SP000096439
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id21A
Drain Source On State Resistance0.165ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation192W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The IPB60R165CP is a 650V CoolMOS™ N-channel Power MOSFET features ultra-low gate charge. It is designed for hard switching and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. It is specially designed for hard switching topologies for server and telecom.
- Low figure-of-merit(FOM) RON x Qg
- Extreme dV/dt rated
- High peak current capability
- Qualified according to JEDEC for target applications
- Ultra low RDS (ON)
- Very fast switching
- Internal Rg very low
- High current capability
- Significant reduction of conduction and switching losses
- High power density and efficiency for superior power conversion systems
- Best-in-class performance ratio
Applications
Industrial, Power Management, Communications & Networking, Consumer Electronics, Alternative Energy
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
21A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
192W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.165ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00143
Product traceability