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IPA60R385CPXKSA1
Power MOSFET, N Channel, 650 V, 9 A, 0.35 ohm, TO-220, Through Hole
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ManufacturerINFINEON
Manufacturer Part NoIPA60R385CPXKSA1
Order Code1663998
Also Known AsIPA60R385CP, SP000089316
Technical Datasheet
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | £1.880 |
| 10+ | £1.350 |
| 100+ | £1.070 |
| 500+ | £0.802 |
| 1000+ | £0.776 |
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPA60R385CPXKSA1
Order Code1663998
Also Known AsIPA60R385CP, SP000089316
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id9A
Drain Source On State Resistance0.35ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation31W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The IPA60R385CP is a N-channel power MOSFET with 650VDS drain source voltage. CoolMOS™ CP, Infineon's fifth series of CoolMOS™ is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV.
- Lowest figure of merit Ron x Qg
- Ultra low gate charge
- Extreme dV/dt rate
- Ultra low R DS (on), ultra low gate charge, very fast switching
- Vth 3 V, g fs very high, internal R g very low
- High current capability
- Significant reduction of conduction and switching losses
- High power density and efficiency for superior power conversion systems
- Best-in-class performance ratio
Applications
Power Management, Consumer Electronics, Communications & Networking, Industrial, Alternative Energy, Portable Devices
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
9A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
31W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.35ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (3)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00195
Product traceability