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BSZ120P03NS3EGATMA1
Power MOSFET, P Channel, 30 V, 40 A, 9000 µohm, TSDSON, Surface Mount
Product Information
ManufacturerINFINEON
Manufacturer Part NoBSZ120P03NS3EGATMA1
Order Code2839439
Product RangeOptiMOS 3
Also Known AsBSZ120P03NS3E G, SP000709730
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id40A
Drain Source On State Resistance9000µohm
Transistor Case StyleTSDSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation52W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeOptiMOS 3
Qualification-
MSL-
Alternatives for BSZ120P03NS3EGATMA1
2 Products Found
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
40A
Transistor Case Style
TSDSON
Rds(on) Test Voltage
10V
Power Dissipation
52W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
9000µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
No. of Pins
8Pins
Product Range
OptiMOS 3
MSL
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001
Product traceability