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BSZ088N03LSGATMA1
Power MOSFET, N Channel, 30 V, 40 A, 8800 µohm, PG-TSDSON, Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoBSZ088N03LSGATMA1
Order Code1775499
Also Known AsBSZ088N03LS G , SP000304138
Technical Datasheet
No Longer Manufactured
Product Information
ManufacturerINFINEON
Manufacturer Part NoBSZ088N03LSGATMA1
Order Code1775499
Also Known AsBSZ088N03LS G , SP000304138
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id40A
Drain Source On State Resistance8800µohm
Transistor Case StylePG-TSDSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Power Dissipation35W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for BSZ088N03LSGATMA1
8 Products Found
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
40A
Transistor Case Style
PG-TSDSON
Rds(on) Test Voltage
10V
Power Dissipation
35W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
8800µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002