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BFP540H6327XTSA1
Bipolar - RF Transistor, NPN, 4.5 V, 30 GHz, 250 mW, 80 mA, SOT-343
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ManufacturerINFINEON
Manufacturer Part NoBFP540H6327XTSA1
Order Code2480668
Also Known AsBFP 540 H6327, SP000745288
Technical Datasheet
Product Information
ManufacturerINFINEON
Manufacturer Part NoBFP540H6327XTSA1
Order Code2480668
Also Known AsBFP 540 H6327, SP000745288
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max4.5V
Transition Frequency30GHz
Power Dissipation250mW
Continuous Collector Current80mA
Transistor Case StyleSOT-343
No. of Pins4Pins
DC Current Gain hFE Min50hFE
Transistor MountingSurface Mount
Operating Temperature Max150°C
Product Range-
Qualification-
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Product Overview
The BFP 540 H6327 is a low-noise Silicon Bipolar RF Transistor designed for highest gain and low-noise amplifier applications.
- Halogen-free
Applications
Industrial, RF Communications, Power Management
Technical Specifications
Transistor Polarity
NPN
Transition Frequency
30GHz
Continuous Collector Current
80mA
No. of Pins
4Pins
Transistor Mounting
Surface Mount
Product Range
-
Collector Emitter Voltage Max
4.5V
Power Dissipation
250mW
Transistor Case Style
SOT-343
DC Current Gain hFE Min
50hFE
Operating Temperature Max
150°C
Qualification
-
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000048